- Title
- Phosphine dissociation on the Si(001) surface
- Creator
- Wilson, H. F.; Warschkow, O.; Marks, N. A.; Schofield, S. R.; Curson, N. J.; Smith, P. V.; Radny, M. W.; McKenzie, D. R.; Simmons, M. Y.
- Relation
- Physical Review Letters Vol. 93, Issue 22
- Publisher Link
- http://dx.doi.org/10.1103/PhysRevLett.93.226102
- Publisher
- American Physical Society
- Resource Type
- journal article
- Date
- 2004
- Description
- Density functional calculations are performed to identify features observed in STM experiments after phosphine (PH3) dosing of the Si(001) surface. On the basis of a comprehensive survey of possible structures, energetics, and simulated STM images, three prominent STM features are assigned to structures containing surface bound PH2, PH, and P, respectively. Collectively, the assigned features outline for the first time a detailed mechanism of PH3 dissociation and P incorporation on Si(001).
- Subject
- density functional calculations; STM
- Identifier
- http://hdl.handle.net/1959.13/29228
- Identifier
- uon:2482
- Identifier
- ISSN:0031-9007
- Language
- eng
- Full Text
- Reviewed
- Hits: 3008
- Visitors: 3282
- Downloads: 412
| Thumbnail | File | Description | Size | Format | |||
|---|---|---|---|---|---|---|---|
| View Details Download | ATTACHMENT01 | Publisher version (open access) | 470 KB | Adobe Acrobat PDF | View Details Download |